BCP56-10,115 Datasheet

BCP56-16,115

Datasheet specifications

Datasheet's name BCP56-16,115
File size 51.873 KB
File type pdf
Number of pages 23

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Nexperia BCP56-10,115
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 1A
  • Power Dissipation (Pd): 960mW
  • Transition Frequency (fT): 180MHz
  • DC Current Gain (hFE@Ic,Vce): 63@150mA,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 80V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,50mA
  • Package: SOT-223
  • Manufacturer: Nexperia

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